Semiconductor Devices and Logic Gates
The equivalent resistance of the circuit across $A B$ is given by
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$4 \Omega$
$13 \Omega$
$4 \Omega$ or $13 \Omega$
$4 \Omega$ or zero
The temperature $(T)$ dependence of resistivity ( $\rho$ ) of a semiconductor is represented by
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A common emitter amplifier has a voltage gain of 50 an input impedance of 100 $\Omega$ and an output impedance of 400 $\Omega$. The power gain of the amplifier is
Truth table for system of four NAND gate and one NOT gate as shown in figure is.
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For an insulator, the forbidden energy gap is
In the circuit shown assume the diode to be ideal. When Vi increases from $-$2V to 6V, the change in current is (in mA)
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In the following circuit the equivalent resistance between X and Y is ......... $\Omega$
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A transistor is connected in common-emitter (CE) configuration. The collector supply is 8V and the voltage drop across a resistor is 500 $\Omega$ in the collector circuit is 0.6 V. IF the current gain factor $\alpha$ is 0.96, find the base current
The phase difference between Vout and Vin of CE amplifier circuit is
The current in the circuit will be
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The combination of the gates shown in following figure yields
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The reading of the ammeter for a germanium diode in the given circuit is
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