2006
Q101
NEET
MCQ
10 Mar 2026
A transistor is operated in common emitter configuration at constant collector voltage VC = 1.5 V such that a change in the base current from 100 $\mu $A to 150 $\mu $A profuces a change in the collector current from 5 mA to 10 mA. The current gain $\beta $ is
A.
50
B.
67
C.
75
D.
100
2006
Q102
NEET
MCQ
10 Mar 2026
Which one of the following represents forward bias diode ?
A.
B.
C.
D.
2005
Q103
NEET
MCQ
10 Mar 2026
In a p-n junction photo cell, the value of the photo-electromotive force profuced by monochromatic light is proportional to
A.
The barrier voltage at the p-n junction.
B.
The intensity of the light falling on the cell.
C.
The frequency of the light falling on the cell.
D.
The voltage applied at the p-n junction.
2005
Q104
NEET
MCQ
10 Mar 2026
Choose the only false statement from the following.
A.
In conductors the valence and conduction bands overlap.
B.
Substances with energy gap of the order of 10 eV are insulators.
C.
The resistivity of a semiconductor increases with increase in temperature.
D.
The conductivity of a semiconductor increases with increase in temperature.
2005
Q105
NEET
MCQ
10 Mar 2026
Zener diode is used for
A.
amplification
B.
rectification
C.
stabilisation
D.
producing oscillations in an oscillator.
2005
Q106
NEET
MCQ
10 Mar 2026
Copper has face centered cubic (fcc) lattice with interatomic spacing equal to 2.54 $\mathop A\limits^ \circ $. The value of lattice constant for this lattice is
A.
2.54 $\mathop A\limits^ \circ $
B.
3.59 $\mathop A\limits^ \circ $
C.
1.27 $\mathop A\limits^ \circ $
D.
5.08 $\mathop A\limits^ \circ $
2005
Q107
NEET
MCQ
10 Mar 2026
Application of a forward bias to a p-n junction
A.
widens the depletion zone
B.
increases the potential difference across the depletion zone
C.
increases the number of donors on the n side
D.
decreases the electric field in the depletion zone.
2005
Q108
NEET
MCQ
10 Mar 2026
Carbon, silicon and germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented by (Eg)C, (Eg)si and (Eg)Ge respectively. Which one of the following relationships is true in their case?
A.
(Eg)C > (Eg)Si
B.
(Eg)C < (Eg)Si
C.
(Eg)C = (Eg)Si
D.
(Eg)C < (Eg)Ge.
2004
Q109
NEET
MCQ
10 Mar 2026
In semiconductors at a room temperature
A.
the valence band is partially empty and the conduction band is partially filled
B.
the valence band is completely filled and the conduction band is partially filled
C.
the valence band is completely filled
D.
the conduction band is completely empty
2004
Q110
NEET
MCQ
10 Mar 2026
The output of OR gate is 1
A.
if both inputs are zero
B.
if either or both inputs are 1
C.
only if both inputs are 1
D.
if either inputs is zero
2004
Q111
NEET
MCQ
10 Mar 2026
Of the diodes shown in the following diagrams, which one is reverse biased ?
A.
B.
C.
D.
2004
Q112
NEET
MCQ
10 Mar 2026
The peak voltage in the output of a half wave diode rectifier fed with a sinusoidal signal without filter is 10 V. The d.c. component of the output voltage is
A.
(10/$\sqrt 2 $) V
B.
$\left( {{{10} \over \pi }} \right)V$
C.
10 V
D.
(20/$\pi $) V
2003
Q113
NEET
MCQ
10 Mar 2026
If a full wave rectifier circuit is operating from 50 Hz mains, the fundamental frequency in the ripple will be
A.
25 Hz
B.
50 Hz
C.
70.7 Hz
D.
100 Hz
2003
Q114
NEET
MCQ
10 Mar 2026
A n-p-n transistor conducts when
A.
both collector and emitter are positive with respect to the base
B.
collector is positive and emitter is negative with respect to the base
C.
collector is positive and emitter is at same potential as the base
D.
both collector and emitter are negative with respect to the base
2003
Q115
NEET
MCQ
10 Mar 2026
Barrier potential of a p-n junction diode does not depened on
A.
diode design
B.
temperature
C.
forward bias
D.
doping density
2003
Q116
NEET
MCQ
10 Mar 2026
Reverse bias applied to a junction diode
A.
lowers the potential barrier
B.
raises the potential barrier
C.
increases the majority carrier current
D.
increases the minority carrier current
2002
Q117
NEET
MCQ
10 Mar 2026
The given truth table is for which logic gate
$\matrix{ A & B & Y \cr 1 & 1 & 0 \cr 0 & 1 & 1 \cr 1 & 0 & 1 \cr 0 & 0 & 1 \cr } $
$\matrix{ A & B & Y \cr 1 & 1 & 0 \cr 0 & 1 & 1 \cr 1 & 0 & 1 \cr 0 & 0 & 1 \cr } $
A.
NAND
B.
XOR
C.
NOR
D.
OR.
2002
Q118
NEET
MCQ
10 Mar 2026
In a p-n junction
A.
high potential at n side and low potential at p side
B.
high potential at P side and low potential at n side
C.
p and n both are at same potential
D.
undetermined.
2002
Q119
NEET
MCQ
10 Mar 2026
For the given circuit of p-n junction diode which is correct
A.
in forward bias the voltage across R is V
B.
in reverse bias the voltage across R is V
C.
in forward bias the voltage across R is 2V
D.
in reverse bias the voltage across R is 2V.
2002
Q120
NEET
MCQ
10 Mar 2026
Number of atom per unit cell in B.C.C.
A.
9
B.
4
C.
2
D.
1
2002
Q121
NEET
MCQ
10 Mar 2026
For a transistor ${{{I_C}} \over {{I_E}}}$ = 0.96, then current gain for common emitter is
A.
12
B.
6
C.
48
D.
24
2001
Q122
NEET
MCQ
10 Mar 2026
The given truth table is for which logic gate
$\matrix{ A & B & Y \cr 1 & 1 & 0 \cr 0 & 1 & 1 \cr 1 & 0 & 1 \cr 0 & 0 & 1 \cr } $
$\matrix{ A & B & Y \cr 1 & 1 & 0 \cr 0 & 1 & 1 \cr 1 & 0 & 1 \cr 0 & 0 & 1 \cr } $
A.
NAND
B.
XOR
C.
NOR
D.
OR
2001
Q123
NEET
MCQ
10 Mar 2026
For a common base circuit if ${{{I_C}} \over {{I_E}}}$ = 0.98 then current gain for common emitter circuit will be
A.
49
B.
98
C.
4.9
D.
25.5.
2001
Q124
NEET
MCQ
10 Mar 2026
The current in the circuit will be
A.
5/40 A
B.
5/50 A
C.
5/10 A
D.
5/20 A
2000
Q125
NEET
MCQ
10 Mar 2026
From the following diode circuit, which diode is in forward biased condition
A.
B.
C.
D.
2000
Q126
NEET
MCQ
10 Mar 2026
The cations and anions are arranged in alternate form in
A.
metallic crystal
B.
ionic crystal
C.
covalent crystal
D.
semi-conductor crystal.
2000
Q127
NEET
MCQ
10 Mar 2026
The correct relation for $\alpha $, $\beta $ for a transistor
A.
$\beta = {{1 - \alpha } \over \alpha }$
B.
$\beta = {\alpha \over {1 - \alpha }}$
C.
$\alpha = {{\beta - 1} \over \beta }$
D.
$\alpha \beta = 1$