Question 1: Palette 1/41

AP-EAPCET 2025 MCQ

At absolute zero temperature, an intrinsic semiconductor behaves as

A

conductor

B

superconductor

C

insulator

D

intrinsic semiconductor

Question 2: Palette 2/41

AP-EAPCET 2025 MCQ

The logic gate equivalent to the combination of logic gates shown in the figure is

A

AND

B

NOR

C

$O R$

D

NAND

Question 3: Palette 3/41

AP-EAPCET 2025 MCQ

In a transistor, if the collector current is $98 \%$ of emitter current, then the ratio of the base and collector currents is

A

$1: 98$

B

$1: 1$

C

$1: 49$

D

$1: 99$

Question 4: Palette 4/41

AP-EAPCET 2025 MCQ

In the given circuit, if $A=0, B=1$ and $C=1$ are inputs, then the values of $y_1$ and $y_2$ are respectively

A

1.1

B

0.1

C

0.0

D

1.0

Question 5: Palette 5/41

AP-EAPCET 2025 MCQ

$ \text { In the given options, the diode that is forward biased is } $

A

B

C

D

Question 6: Palette 6/41

AP-EAPCET 2025 MCQ

In a common emitter transistor amplifier the resistance of collector is $3 \mathrm{k} \Omega$. If the current amplification factor is 100 and the base resistance is $2 \mathrm{k} \Omega$, then the power gain of the transistor is

A

150

B

10000

C

1500

D

15000

Question 7: Palette 7/41

AP-EAPCET 2025 MCQ

If $X, Y$ and $Z$ are the sizes of the emitter, base and collector of a transistor respectively, then

A

$X>Z>Y$

B

$X>Y>Z$

C

$Z>X>Y$

D

$Z>Y>X$

Question 8: Palette 8/41

AP-EAPCET 2025 MCQ

The logic gate equivalent to the circuit given in the figure is

A

NAND

B

$O R$

C

AND

D

NOR

Question 9: Palette 9/41

AP-EAPCET 2025 MCQ

In common emitter amplifier of a transistor, if the ratio of the voltage gain and current amplification factor is 4 , then the ratio of the collector and base resistances is

A

$16: 1$

B

$1: 16$

C

$1: 4$

D

$4: 1$

Question 10: Palette 10/41

AP-EAPCET 2025 MCQ

If three logic gates are connected as shown in the figure, then the correct truth table of the circuit is

A

$ \begin{array}{|c|c|c|} \hline A & B & y \\ \hline 0 & 0 & 1 \\ 0 & 1 & 0 \\ 1 & 0 & 0 \\ 1 & 1 & 1 \\ \hline \end{array} $

B

$ \begin{array}{|c|c|c|} \hline A & B & y \\ \hline 0 & 0 & 1 \\ 0 & 1 & 1 \\ 1 & 0 & 1 \\ 1 & 1 & 0 \\ \hline \end{array} $

C

$ \begin{array}{|c|c|c|} \hline A & B & y \\ \hline 0 & 0 & 0 \\ 0 & 1 & 0 \\ 1 & 0 & 0 \\ 1 & 1 & 1 \\ \hline \end{array} $

D

$ \begin{array}{|c|c|c|} \hline A & B & y \\ \hline 0 & 0 & 0 \\ 0 & 1 & 1 \\ 1 & 0 & 1 \\ 1 & 1 & 0 \\ \hline \end{array} $

Question 11: Palette 11/41

AP-EAPCET 2025 MCQ

The voltage gain and the current amplification factor of a transistor in common emitter configuration are 300 and 60 respectively. If the collector resistance is $5 \mathrm{k} \Omega$, then the base resistance is

A

$5 \mathrm{k} \Omega$

B

$25 \mathrm{k} \Omega$

C

$2 \mathrm{k} \Omega$

D

$1 \mathrm{k} \Omega$

Question 12: Palette 12/41

AP-EAPCET 2025 MCQ

The logic gate equivalent to the circuit shown in the figure is

A

AND

B

NAND

C

NOR

D

$O R$

Question 13: Palette 13/41

AP-EAPCET 2025 MCQ

When three NAND logic gates are connected as shown in the figure, then the logic gate equivalent to the circuit is

A

NOT

B

AND

C

$O R$

D

NOR

Question 14: Palette 14/41

AP-EAPCET 2025 MCQ

The device used for voltage regulation is

A

Zener diode

B

photo diode

C

light emitting diode

D

solar cell

Question 15: Palette 15/41

AP-EAPCET 2025 MCQ

A transistor has 3 impurity regions of different doping levels. In the order of increasing doping level, the regions are

A

emitter, base, collector

B

collector, base, emitter

C

base, emitter, collector

D

base, collector, emitter

Question 16: Palette 16/41

AP-EAPCET 2025 MCQ

A transistor works as an amplifier when

A

emitter-base junction is forward biased and base-collector junction is reverse biased.

B

both emitter-base and base-collector junctions are forward biased.

C

both emitter-base and base-collector junctions are reverse biased.

D

emitter-base junction is reverse biased and base-collector junction is forward biased.

Question 17: Palette 17/41

AP-EAPCET 2025 MCQ

If five logic gates are connected as shown in the figure, then the values of $y_1, y_2$ and $y_3$, are respectively

A

1, 1, 1

B

$0,0,1$

C

$1,1,0$

D

$1,0,1$

Question 18: Palette 18/41

AP-EAPCET 2025 MCQ

A Zener diode of breakdown voltage 20 V is connected as shown in the given circuit. The current through Zener diode is

A

10 mA

B

4 mA

C

6 mA

D

8 mA

Question 19: Palette 19/41

AP-EAPCET 2025 MCQ

The voltage gains of two amplifiers connected in series are 8 and 12.5 . If the voltage of the input signal is $200 \mu \mathrm{~V}$, then the voltage of the output signal is

A

$50 \mu \mathrm{~V}$

B

$20 \mu \mathrm{~V}$

C

20 mV

D

50 mV

Question 20: Palette 20/41

AP-EAPCET 2024 MCQ

In the diodes show in the diagrams, which one is reverse biased?

A

B

C

D

Question 21: Palette 21/41

AP-EAPCET 2024 MCQ

$ \text { The following configuration of gates is equivalent to } $

A

NAND

B

$X O R$

C

AND

D

$O R$

Question 22: Palette 22/41

AP-EAPCET 2024 MCQ

$ \text { Truth table for the given circuit is } $

A

$ \begin{array}{lll} \hline A & B & Y \\ \hline 0 & 0 & 1 \\ \hline 0 & 1 & 0 \\ \hline 1 & 0 & 1 \\ \hline 1 & 1 & 1 \\ \hline \end{array} $

B

$ \begin{array}{lll} \hline A & B & Y \\ \hline 0 & 0 & 1 \\ \hline 0 & 1 & 1 \\ \hline 1 & 0 & 0 \\ \hline 1 & 1 & 1 \\ \hline \end{array} $

C

$ \begin{array}{lll} \hline A & B & Y \\ \hline 0 & 0 & 1 \\ \hline 0 & 1 & 1 \\ \hline 1 & 0 & 1 \\ \hline 1 & 1 & 1 \\ \hline \end{array} $

D

$ \begin{array}{lll} \hline A & B & Y \\ \hline 0 & 0 & 0 \\ \hline 0 & 1 & 1 \\ \hline 1 & 0 & 1 \\ \hline 1 & 1 & 1 \\ \hline \end{array} $

Question 23: Palette 23/41

AP-EAPCET 2024 MCQ

If $R_C$ and $R_B$ are respectively the resistances of in collector and base sides of the circuit and $\beta$ is the current amplification factor, then the voltage gain of a transistor amplifier in common emitter configuration is

A

$\beta R_C R_B$

B

$\frac{\beta}{R_C R_B}$

C

$\frac{\beta R_B}{R_C}$

D

$\frac{\beta R_C}{R_B}$

Question 24: Palette 24/41

AP-EAPCET 2024 MCQ

The current gain of a transistor in common emitter configuration is 80 . The resistances in collector andbase sides of the circuit are $5 \mathrm{k} \Omega$ and $1 \mathrm{k} \Omega$ respectively. If the input voltage is 2 mV , the output voltage is

A

4 V

B

0.4 V

C

0.8 V

D

8 V

Question 25: Palette 25/41

AP-EAPCET 2024 MCQ

Four logic gates are connected as shown in the figure. If the inputs are $A=0, B=1$ and $C=1$, then the values of $Y_1$ and $Y_2$ respectively, are

A

1,0

B

1,1

C

0,1

D

0,0

Question 26: Palette 26/41

AP-EAPCET 2024 MCQ

Pure silicon at 300 K has equal electron and hole concentration of $1.5 \times 10^{16} \mathrm{~m}^{-3}$. If the hole concentration increases to $3 \times 10^{22} \mathrm{~m}^{-3}$, then electron concentration in the silicon is

A

$0.75 \times 10^9 \mathrm{~m}^{-3}$

B

$750 \mathrm{~m}^{-3}$

C

$75 \mathrm{~m}^{-3}$

D

$7.5 \times 10^9 \mathrm{~m}^{-3}$

Question 27: Palette 27/41

AP-EAPCET 2024 MCQ

In $n-p-n$ transistor circuit, the collector current is 10 mA . If $95 \%$ of the electrons emitted reach the collector, then the base current is nearly

A

5.3 mA

B

53 mA

C

35 mA

D

0.53 mA

Question 28: Palette 28/41

AP-EAPCET 2024 MCQ

The semiconductor used for fabrication of visible LEDS must at least have a band gap of

A

0.6 eV

B

1.2 eV

C

1.8 eV

D

0.9 eV

Question 29: Palette 29/41

AP-EAPCET 2024 MCQ

In a common emitter amplifier, AC current gains 40 and input resistance is $2 \mathrm{k} \Omega$. The load resistance is given as $10 \mathrm{k} \Omega$. Then, the voltage gain is

A

52

B

125

C

178

D

200

Question 30: Palette 30/41

AP-EAPCET 2024 MCQ

The voltage gain and current gain of a transistor amplifier in common emitter configuration are respectively 150 and 50 . If the resistance in the base circuit is $850 \Omega$, then the resistance in collector circuit is

A

$1700 \Omega$

B

$2250 \Omega$

C

$2550 \Omega$

D

$3000 \Omega$

Question 31: Palette 31/41

AP-EAPCET 2024 MCQ

If the energy gap of a substance is 5.4 eV , then the substance is

A

insulator

B

conductor

C

p-type semiconductor

D

$n$-type semiconductor

Question 32: Palette 32/41

AP-EAPCET 2024 MCQ

A p-n junction diode is used as

A

an amplifier

B

a rectifier

C

an oscillator

D

a modulator

Question 33: Palette 33/41

AP-EAPCET 2024 MCQ

When a signal is applied to the input of a transistor, it was found that output signal is phase-shifted by $180^{\circ}$. The transistor configuration is

A

CB - configuration

B

CE - configuration

C

CC - configuration

D

Both CB and CC - configuration

Question 34: Palette 34/41

AP-EAPCET 2024 MCQ

If $n_r$ and $n_h$ are concentrations of electron and holes in a semiconductor, then the intrinsic carrier concentration $n_j$ in thermal equilibrium is

A

$n=\sqrt{\frac{n_3}{n_n}}$

B

$n=\frac{n_n}{n_n}$

C

$n=\sqrt{7 b n_n}$

D

$n_1=n_0+n_n$

Question 35: Palette 35/41

AP-EAPCET 2024 MCQ

In the given digital circuit, if the inputs are $A=1 B_x$ and $C=1$, then the value of $Y_1$ and $Y_2$ are respectino

A

0,1

B

0,0

C

1,1

D

1,0

Question 36: Palette 36/41

AP-EAPCET 2022 MCQ

Consider the statements In a semiconductor

(A) There are no free electrons at 0 K.

(B) There are no free electrons at any temperature.

(C) The number of free electrons increases with temperature.

(D) The number of free electrons is less than that in a conductor.

A

B, C, D are true but A is false.

B

A, B, C are true but D is false.

C

A, C, D are true but B is false.

D

A, B, C and D are all true.

Question 37: Palette 37/41

AP-EAPCET 2022 MCQ

Output of following logic circuit is

A

$(\bar{A}+B)+(\bar{A}+\bar{C})+(B+\bar{C})$

B

$(A+\bar{B}) \cdot(A+C) \cdot(\bar{B}+\bar{C})$

C

$(\bar{A}+B) \cdot(\bar{A}+\bar{C}) \cdot(B+\bar{C})$

D

$(\bar{A}+B)-(\bar{A}+\bar{C})-(B+\bar{C})$

Question 38: Palette 38/41

AP-EAPCET 2021 MCQ

The output current versus time curve of a rectifier is shown in the figure. The average value of output current in this case is ........... .

A

0

B

$\frac{I_0}{2}$

C

$\frac{2I_0}{\pi}$

D

$I_0$

Question 39: Palette 39/41

AP-EAPCET 2021 MCQ

A change of $0.04 \mathrm{~V}$ takes place between the base and the emitter when an input signal is connected to the common emitter transistor amplifier. As a result, $20 ~\mu \mathrm{A}$ change takes place in the base current and a change of $2 \mathrm{~mA}$ takes place in the collector current. The input resistance and AC current gain are

A

$1 \mathrm{~k} \Omega$ and 100

B

$2 \mathrm{~k} \Omega$ and 100

C

$2 \mathrm{~k} \Omega$ and 1000

D

$1 \mathrm{~k} \Omega$ and 200

Question 40: Palette 40/41

AP-EAPCET 2021 MCQ

The truth table given below corresponds to logic gate.

A

NAND

B

OR

C

AND

D

XOR

Question 41: Palette 41/41

AP-EAPCET 2021 MCQ

A transistor is connected in common emitter configuration. The collector supply is $8 \mathrm{~V}$ and the voltage drop across a resistor of $800 \Omega$ in the collector circuit is $0.5 \mathrm{~V}$. If the current gain factor $\alpha$ is 0.96, then the base current is

A

$2.6 \times 10^{-5} \mathrm{~A}$

B

$3.6 \times 10^{-5} \mathrm{~A}$

C

$5.6 \times 10^{-5} \mathrm{~A}$

D

$6.6 \times 10^{-5} \mathrm{~A}$