iCON Education - Semiconductor Electronics AIIMS Test

Question 1: Palette 1/8

AIIMS 2019 MCQ

The given transistor operates in saturation region then what should be the value of $V_{B B}$ ?

$\begin{aligned} & \left(R_{\text {out }}=200 \Omega, R_{\text {in }}=100 \mathrm{~k} \Omega, V_{C C}=3 \mathrm{~V},\right. \\\\ & \left.V_{B E}=0.7 \mathrm{~V}, V_{C E}=0, \beta=200\right) \end{aligned}$

AIIMS 2019 Physics - Semiconductor Electronics Question 6 English

4.1 V

7.5 V

8.2 V

6.8 V

Question 2: Palette 2/8

AIIMS 2019 MCQ

If voltage across a zener diode is 6V, then find out the value of maximum resistance in this condition.

AIIMS 2019 Physics - Semiconductor Electronics Question 8 English

2 k$\Omega$

3 k$\Omega$

5 k$\Omega$

4 k$\Omega$

Question 3: Palette 3/8

AIIMS 2019 MCQ

Assertion : Photodiode and solar cell work on same mechanism.

Reason : Area is large for solar cell.

If both assertion and reason are true and reason is the correct explanation of assertion.

If both assertion and reason are true, but reason is not the correct explanation of assertion.

If assertion is true, but reason is false.

If both assertion and reason are false.

Question 4: Palette 4/8

AIIMS 2018 MCQ

AIIMS 2018 Physics - Semiconductor Electronics Question 3 English

The diode used at a constant potential drop of 0.5 V at all currents and maximum power rating of 100 mW. What resistance must be connected in series diode, so that current in circuit is maximum?

200$\Omega$

6.67$\Omega$

5$\Omega$

15$\Omega$

Question 5: Palette 5/8

AIIMS 2018 MCQ

Assertion Thickness of depletion layer is fixed in all semiconductor devices.

Reason No free charge carriers are available in depletion layer.

Both Assertion and Reason are correct, Reason is the correct explanation of Assertion

Both Assertion and Reason are correct but Reason is not the correct explanation of Assertion

Assertion is correct and Reason is incorrect

Assertion is incorrect and Reason is correct

Question 6: Palette 6/8

AIIMS 2017 MCQ

The current gain of a transistor in common emitter mode is 49. The change in collector current and emitter current corresponding to change in base current by $5.0 \mu \mathrm{A}$, will be

$245 \mu \mathrm{A}, 250 \mu \mathrm{A}$

$240 \mu \mathrm{A}, 235 \mu \mathrm{A}$

$260 \mu \mathrm{A}, 255 \mu \mathrm{A}$

None of the above

Question 7: Palette 7/8

AIIMS 2017 MCQ

A specimen of silicon is to be made $P$-type semiconductor for this one atom of indium, on an average, is doped in $5 \times 10^7$ silicon atoms. If the number density of silicon is $5 \times 10^{22}$ atom/$\mathrm{m}^3$ then the number of acceptor atoms per $\mathrm{cm}^3$ will be

$2.5 \times 10^{30}$

$1.0 \times 10^{13}$

$1.0 \times 10^{15}$

$2.5 \times 10^{36}$

Question 8: Palette 8/8

AIIMS 2017 MCQ

A proper combination of $3 \mathrm{NOT}$ and 1 NAND gates is shown. If $A=0, B=1, C=1$, then the output of this combination is

AIIMS 2017 Physics - Semiconductor Electronics Question 1 English

not predictable

None of these